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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2SC3422 description collector-emitter breakdown voltage : v (br)ceo = 40v(min) good linearity of h fe complement to type 2sa1359 applications audio frequency power amplifier low speed switching suitable for output stage of 5 watts car radio and car stereo absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage 40 v v ceo collector-emitter v oltage 40 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a i b base current-continuous 1 a p c collector power dissipation @ t c =25 10 w collector power dissipation @ t a =25 1.5 t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2SC3422 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ; i b = 0 40 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b =0.2a 0.8 v v be( on ) base-emitter on voltage i c = 0.5a ; v ce = 2v 1.0 v i cbo collector cutoff current v cb = 40v; i e = 0 0.1 a i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 a h fe-1 dc current gain i c = 0.5a; v ce = 2v 80 240 h fe-2 dc current gain i c = 2.5a; v ce = 2v 25 f t current-gainbandwidth product i c = 0.5a; v ce = 2v 100 mhz c ob output capacitance i e = 0; v cb = 10v, f test = 1mhz 35 pf ? h fe-1 classifications o y 80-160 120-240 |
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